{"id":214,"date":"2018-12-10T11:06:22","date_gmt":"2018-12-10T11:06:22","guid":{"rendered":"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/?post_type=chapter&#038;p=214"},"modified":"2018-12-12T11:22:09","modified_gmt":"2018-12-12T11:22:09","slug":"214","status":"publish","type":"chapter","link":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/chapter\/214\/","title":{"rendered":"Electron Beam Lithography &#8211; I"},"content":{"raw":"<div><span style=\"float: right\"><a href=\"https:\/\/youtu.be\/0zbHJQCQnyA\" target=\"_blank\" rel=\"noopener\"><img src=\"http:\/\/epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/2018\/11\/download.png\" alt=\"epgp books\" width=\"75px\" height=\"75px;\" \/><\/a>\r\n<\/span><\/div>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Learning Objectives<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>From this module students may get to know about the following<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>i. Overview of Lithography Techniques<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>ii. Electron Beam Lithography<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>iii. Working Principle of Electron Beam Lithography<\/em><\/p>\r\n\r\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>1. Introduction<\/strong><\/h1>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>1.1. Lithography<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Lithography comes from the Greek words <em><strong>lithos<\/strong> <\/em>means stone and <strong><em>grapho<\/em><\/strong> means write. Low dimensional structures are defined with writing patterns at micro\/nano-meter scale designed by printing text or graphics on the surface of materials. Lithography is currently one of the most feasible techniques used for patterning micro\/nanoscale features of desired designs with definite shape, size and material compositions, selectively on the material of choice for device fabrication. Several lithographic methods are developed with different resolution, reproducibility, speed, simplicity for processing, and acquisition costs, etc., by using different sources of energy. The process of utilizing light source for patterning is termed as photolithography and utilization of energetic beams as source are nomenclatured according to the type of energy source.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">During semiconductor processing, fabrication of micro\/nano-structures rearranges the additives by deposition, subtractives by etching, and surface dopants by annealing. Etching out the unwanted materials and depositing desired materials for fabrication of a complete nanosctructure or device structure is the key concept of microfabrication processing. Lithography is used for defining the wanted and unwanted regions by using a polymer chemical called resist layer over top of the surface to be patterned. The etching of unwanted material or metallization of new materials are pursued with the patterned resist on the surface, followed by resist cleaning to fabricate the desired structure. Simple solvents includes acetone, methyl ethyl ketone (CH<sub>3<\/sub>COC<sub>2<\/sub>H<sub>5<\/sub>), methyl isobutyl ketone (CH<sub>3<\/sub>COC<sub>4<\/sub>H<sub>9<\/sub>) for chemicals used for resists stripping\/lift-off process. Additional O<sub>2<\/sub> plasma cleaning is effective for removing residual resist or any organic contaminations during lithography process.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>1.2. Types of Lithography<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">In general, the ability to view or fabricate nano-sized objects depends on availability of strongly focused particle beams. Since, diffraction limits the spot size of the exposure, smaller the wavelength of the beam particle produces smaller spots. Here in the tabular are few beam energies correlating to particle wavelength (\u00c5) at various energies that decide the spot size are tabulated in Table 1.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter wp-image-215\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12.png\" alt=\"\" width=\"685\" height=\"168\" \/>\r\n<strong>Table 1. <em>Particle wavelength (\u00c5) at various energies<\/em><\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter wp-image-216 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972.png\" alt=\"\" width=\"809\" height=\"401\" \/><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\"><em><strong>1.3 Basic components and working principle of lithography<\/strong><\/em><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>1) Energy Source- Modifies the resist dissolution rate.<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>2) Mask \u2013 Allows patterning by shining direct energy to the resist.<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>3) Exposure Systems\/Aligner - Aligns the mask to patterns to be written on wafer.<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em>4) Resist - Transfers the image from mask to wafer.<\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Schematic of the photolithography technique is demonstrated in Figure-1. Generally, photolithography utilizes a light source that illuminates over an area of larger dimension compared to the dimension of the features to be designed. This requires a photo mask of same design with the feature sizes to restrict light to pass through and fall on to the photoresist on the substrate. The photo mask is the master pattern of the designs that transfer to wafers. The region, where light falls, could change the chemical decomposition of the polymer used as photoresist and could be dissolved out using another solvent during the lift-off process.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter wp-image-217\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9.png\" alt=\"\" width=\"442\" height=\"255\" \/><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 1. <em>Components of Lithography<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>1.3.1. Steps for Photolithography<\/strong><\/em><\/p>\r\n\r\n<ul>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Sample surface preparation<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Resist coating (Spin casting)<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Pre-bake (Soft bake)<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Alignment (Photo mask and substrate)<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Exposure<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Post-bake (Hard bake)<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Development<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Processing using the resist masking layer (Etching, Metallization, \u2026)<\/em><\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\"><em>Lift-off of resist layer<\/em><\/li>\r\n<\/ul>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>2. Electron Beam Lithography<\/strong><\/h1>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The difference between photolithography and E-beam lithography are pointed here.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-218\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10.png\" alt=\"\" width=\"822\" height=\"305\" \/><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\">Electron beam lithography is a mask-less technology developed in 1950s. The aim is to create nanometer scale structures in the resist that can subsequently be transferred to the substrate material and the resists used as a patterned mask for semiconductor processing during micro-fabrication processes. The final pattern is created directly from a digital representation on computer and scanning the electron beam on the resist- coated substrate following the computer patterning. This is pursued with scanning the beam over the resist coated substrate by controlling its deflection from a computer. The exposed regions (in the case of a positive resist) or unexposed regions (in the case of a negative resist) are then selectively removed (developed). It\u2019s primary advantage is it\u2019s ability to draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Example of gold (Au) metallization using resist coating and e-beam lithography is sketched in Figures 2 - 6. The polymethyl methacrylate (PMMA) as positive e-beam resist with chlorobenzene or anisole as casting solvent, is spin coated over the substrate. Electron beam exposure breaks the polymer into fragments that we dissolve in a developer (1:1 of methyl isobutyl ketone and isopropyl alcohol).<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-219\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8.png\" alt=\"\" width=\"794\" height=\"124\" \/><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 2. <em>Chemical reaction of the resist polymer after exposure to energetic beam<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-220\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7.png\" alt=\"\" width=\"513\" height=\"248\" \/><img class=\"aligncenter size-full wp-image-221\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6.png\" alt=\"\" width=\"403\" height=\"158\" \/><strong>Figure. 3. <em>Exposure to electron resist cross-section: The electron beam causes chemical changes in the exposed areas<\/em><\/strong><\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-222\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3.png\" alt=\"\" width=\"498\" height=\"84\" \/><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 4. <em>Development of electron resist cross-section: Chemically changed e- resist dissolved in a specific solvent (positive lithography)<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\">With the removal of the exposed resist from the substrate, a thin metallic layer is deposited which sticks to the substrate, while on the unexposed areas the metal sticks to the resist surface (Fig. 5). After metal deposition the remaining (unexposed) resist is dissolved in an aggressive solvent and lift off). The metal sticking to the resist loses footing and only the metal sticking to the substrate remains after lift-off process (as in Fig. 6).<\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-223\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2.png\" alt=\"\" width=\"479\" height=\"103\" \/><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 5. <em>Electron resist cross-section after metal deposition<\/em><\/strong><\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter size-full wp-image-224\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1.png\" alt=\"\" width=\"496\" height=\"114\" \/>\r\n<strong>Figure 6. <em>Circuit cross-section after metal deposition<\/em><\/strong><\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n\r\n&nbsp;\r\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>3. Formation of Thin Films Resists using Spin Coating<\/strong><\/h1>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Spin coating is a process used to deposit or coat a liquid or a suspension in the form of a thin film by introducing the solution at the center of the rotating substrate (as shown in Figure 7). In spin coating a substrate is placed on the chuck (sample holder) of the spin coater that connects to a vacuum pump to hold the substrate. A small amount of resist is poured at the center of the substrate with help of a dropper. Further this substrate is rotated at a constant angular speed for specific time period. The spinning at high speed using a motor allows the coating material to spread out over the substrates by centrifugal force and is continued till the desired amount of thickness is achieved. The steps to be followed during the spin coating process are indicated in Figure 7. Repeating the spin coating process consecutively for few times can form highly thick films.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Generally, the spinning speed and spinning time of the substrate are controlled according to the required thickness of the film. Viscosity and volatility of solvent, surface tension, and amount of solid content in the suspension are additional factors that affect the thickness of the coated film. Centrifugal force, viscous force, and evaporation rate of the solvent are the forces involved in the spin coating process.<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><img class=\"aligncenter wp-image-225 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963.png\" alt=\"\" width=\"349\" height=\"250\" \/>\r\n<strong>Figure 7: <em>Steps to follow during spin coating process.<\/em><\/strong><\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n\r\n<img class=\"aligncenter size-full wp-image-226\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/12.png\" alt=\"\" width=\"458\" height=\"426\" \/>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 8: <em>Variation of thickness of the spin coated films w. r. t. the (a) spin speed (b) executing time (c) viscosity<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\">The thickness of the film depends on the viscosity and concentration of the solution. Thinner films of suspension material can be formed by using low viscos and\/or non-volatile solvents spin-coated at higher speeds. Figure 8a and 8b represents the general trend for the expected variation in the film thickness with speed and time as parameters. For most of the resist materials, the final thickness is inversely proportional to the spin speeds and spins time,<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>?= 1\/\u221aw<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">where, \u2018t\u2019 is the thickness of the material and w is the angular speed. Figure 8c shows that for low viscous material the thickness is low and for high viscous material the thickness is high.<\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>4. Electron Beam Lithography System<\/strong><\/h1>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\">Electron-beam lithography systems can be classified according to both the beam shape and beam deflection. Earlier systems scanned Gaussian-shaped beams in a raster fashion. Nowadays, systems use shaped beams, which may be deflected to various positions in the writing field (this is also known as vector scan)<\/p>\r\n<img class=\"aligncenter wp-image-230\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/13.png\" alt=\"\" width=\"482\" height=\"305\" \/>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 9.<em> Electron Beam Exposure Systems<\/em><\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">An electron beam lithography system (as shown in Figure 9) consists of an electron source, a lens system, an electron beam deflection system, a motorized stage, and computers and software to control all the elements. The beam deflection system is used to scan the beam within a writing field, typically 100 \u00b5m x 100 \u00b5m up to 1 mm x 1 mm. The movement between writing fields is performed by the motorized stage, controlled with a laser interferometer to achieve the smallest possible stitching error between those writing fields.<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1. Electron Beam Sources<\/strong><\/em><\/p>\r\n<img class=\"aligncenter wp-image-231 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777.png\" alt=\"\" width=\"754\" height=\"178\" \/>\r\n\r\n<img class=\"aligncenter size-full wp-image-232\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/14.png\" alt=\"\" width=\"180\" height=\"178\" \/>\r\n\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 9.<em> Work Function and Fermi level of metals <\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong><em>Techniques for electron emissions from the source metal are listed below:<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1.1. Types of Sources<\/strong><\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>I) THERMIONIC EMITTERS<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">In thermionic emitters, electrons are given thermal energy to overcome the barrier (work function) of the emitting material. Current is given by the Richardson-Dushman equation, which relates the current density of a thermionic emission to the work function (\u03c60) and temperature (T) of the emitting material by mathematical relation,<\/p>\r\n<img class=\"aligncenter size-full wp-image-233\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1.png\" alt=\"\" width=\"811\" height=\"148\" \/> <img class=\"aligncenter size-full wp-image-234\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2.png\" alt=\"\" width=\"748\" height=\"148\" \/>\r\n<p class=\"no-indent\"><strong>III) PHOTO EMITTERS<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">In\u00a0 photo\u00a0 emitters,\u00a0 energy\u00a0 is\u00a0 given\u00a0 to\u00a0 electrons\u00a0 by\u00a0 incident\u00a0 radiation\u00a0 (photons).\u00a0 Only\u00a0 photo-electrons generated close to the surface are able to escape from the material.<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1.2. Cathode Materials<\/strong><\/em><\/p>\r\n\r\n<ul>\r\n \t<li class=\"no-indent\">Thermionic cathodes: Thoriated tungsten (1700 C &amp; 3 A\/cm2); WC+ThO2 W + Th+ CO2 (bad vacuum) lanthanum hexaborid; oxide coated (750 C &amp; 0.5 A\/cm2); Ni coated by Sr-O, Ba-O, Ca-O; tungsten sponge filled with Ba\/Ca aluminate (1100 C &amp; 5 A\/cm2) are used as source materials.<\/li>\r\n \t<li class=\"no-indent\">Field-Emission cathodes (best but most expensive): The emission occurs in lobes because of crystal facets present at the surface emission can be unstable.<\/li>\r\n<\/ul>\r\n<p class=\"no-indent\">Various types of cathode materials used in e-beam lithography are tabulated below.<\/p>\r\n<img class=\"aligncenter size-full wp-image-235\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/15.png\" alt=\"\" width=\"795\" height=\"401\" \/>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Table 4. <em>Various materials used as cathodes to generate electron beams<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>4.2. Lenses<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Both electrostatic and magnetic lenses are used in electron beam lithography system. However, electrostatic lenses have more aberrations, hence these are not used for fine focusing. There is no current mechanism to make achromatic electron beam lenses, so extremely narrow dispersions of the electron beam energy are needed for finest focusing.<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>4.3. E\u2010 beam Lithography Write Time<\/strong><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The minimum time to expose a given area for a given dose is estimated from D. A = T. I, where T is the time to expose the object (can be divided into exposure time\/step size), I is the beam current, D is the dose, and A is the area exposed. For example, assuming an exposure area of 1cm2, a dose of 10\u22123 Coulomb\/cm2, and a beam current of 10\u22129 Amperes, the resulting minimum write time would be 106 seconds (about 12 days).<\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>5. Stage and Substrate Positioning in E-beam Lithography<\/strong><\/h1>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.1. Positioning the Sample and Stage<\/strong><\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The scanning of beams is controlled by its deflection from a computer (sequential exposure) coded program. Exposure in a spot takes ~10<sup>-7<\/sup> s and a mechanical stage is used to move the samples to have a beam exposure along larger distances.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">Alignment is made for each stage positions, either by checking for registration marks, or using laser interferometers to precisely measure the stage movement.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">A\u00a0 good\u00a0 quality\u00a0 substrate\u00a0 for\u00a0 electron\u00a0 beam\u00a0 lithography\u00a0 must\u00a0 satisfy\u00a0 various\u00a0 conditions\u00a0 stated\u00a0 below:<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">1) It should be conductive, or else the wafer would build up an electric charge, which would deflect the electron beam, thus distorting the drawn pattern.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">2) The base for electronic circuits should be insulating (to avoid the entire circuit would be short circuited). The substrate should be as close to insulating as possible without distorting the drawn pattern.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The most widely used substrate is silicon, which is semiconducting with a thin insulating layer of silicon dioxide on top. Other substrates that can be used are glass plates coated with metal chrome, widely used in mask production, in which the metal layer should be grounded before drawing.<\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2. Scanning of e-beam on the Resist Coated Surfaces<\/strong><\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The e-beam scanning system for moving over the resist layer could contain single or multiple beams scanned over the resist layers in vector or raster scanning modes. Various scanning systems are categorized in Figure 10.<\/p>\r\n<img class=\"aligncenter wp-image-236\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/16.png\" alt=\"\" width=\"611\" height=\"220\" \/>\r\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 10. <em>Different scanning systems utilized in e-beam lithography.<\/em><\/strong><\/p>\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2.1. Vector scan:<\/strong><\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The vector scanning systems deflect the beam to follow paths dictated by the pattern and is schematized in Figure 11a. A scanning technique where the beam is positioned over an area of the substrate, and the features in that area are drawn out using lines according to the pattern data. The beam remains on at all times. The Raster scan is performed by following the three steps:<\/p>\r\n\r\n<ul>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">An area of an individual die is aligned under the electron beam<\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">The beam is deflected so as to draw out the features in that area of the chip<\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">The chip is completed either by a step-and-repeat method, or by continually moving the substrate\u00a0 The alignment of features in adjacent scanning area is important. A measure of misalignment is termed as the butting error<\/li>\r\n<\/ul>\r\n<img class=\"aligncenter size-full wp-image-237\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/17.png\" alt=\"\" width=\"647\" height=\"319\" \/>\r\n\r\n&nbsp;\r\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2.2. Raster Scan<\/strong><\/em><\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The raster-scanning systems cover the area of pattern by switching the e-beam on and off as required by the patterns shape and is schematized in Fig. 11b. A scanning technique where the beam scans line by line a section of the surface. The beam is turned on or off depending on whether the current pixel is to be exposed or not. The Raster scan is performed as follows:<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The chip is divided into stripes of ~2<sup>8<\/sup> pixels.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The selected strip is written onto the substrate.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The beam scans over the substrate line by line.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 If the current pixel is to be exposed, the beam is on.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 If the current pixel is not to be exposed, the beam remains off.<\/p>\r\n<p class=\"no-indent\" style=\"text-align: justify\">The substrate is moved perpendicular to the scan lines by a laser-controlled table.<\/p>\r\n&nbsp;\r\n\r\n&nbsp;\r\n<table>\r\n<tbody>\r\n<tr>\r\n<td><strong>you can view video on Electron Beam Lithography \u2013 I<\/strong><\/td>\r\n<td><a href=\"https:\/\/youtu.be\/0zbHJQCQnyA\" target=\"_blank\" rel=\"noopener\"><img class=\"alignnone wp-image-120\" src=\"http:\/\/epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/2018\/11\/download.png\" alt=\"\" width=\"36\" height=\"36\" \/><\/a><\/td>\r\n<\/tr>\r\n<\/tbody>\r\n<\/table>\r\n&nbsp;\r\n\r\n<strong>Summary<\/strong>\r\n<ul>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">Advantages of e-beam lithography includes smaller spot size &lt; 100 \u00c5, high speed writing with great precision of e-beam deflection and modulation, good control over the energy and dose delivered to resist provides an ultimate machine for patterning resists with high resolution, high density, high sensitivity and high reliability.<\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">In e-beam lithography, the key focus is the quality of the electron optics (e.g., the ability to create a focused spot), the choice of resist, substrate and developer, and the process conditions of electron beam energy and dose, and development time and temperature, are the key parameters that defines the successful designing of nanometer scale patterns.<\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">Two distinct uses of e-beam lithography, (a) direct exposure of resist for device fabrication, (b) mask fabrication for subsequent photolithography.<\/li>\r\n \t<li class=\"no-indent\" style=\"text-align: justify\">Various scanning systems are categorized by the way they scans. The vector scan features two-dimensional full-chip scan, provides a distortion free deflection, nd uses a stepped stage movement. The Raster scan features one dimensional line scan with continuously moving stage.<\/li>\r\n<\/ul>","rendered":"<div><span style=\"float: right\"><a href=\"https:\/\/youtu.be\/0zbHJQCQnyA\" target=\"_blank\" rel=\"noopener\"><img decoding=\"async\" src=\"http:\/\/epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/2018\/11\/download.png\" alt=\"epgp books\" width=\"75px\" height=\"75px;\" \/><\/a><br \/>\n<\/span><\/div>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Learning Objectives<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>From this module students may get to know about the following<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>i. Overview of Lithography Techniques<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>ii. Electron Beam Lithography<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>iii. Working Principle of Electron Beam Lithography<\/em><\/p>\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>1. Introduction<\/strong><\/h1>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>1.1. Lithography<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Lithography comes from the Greek words <em><strong>lithos<\/strong> <\/em>means stone and <strong><em>grapho<\/em><\/strong> means write. Low dimensional structures are defined with writing patterns at micro\/nano-meter scale designed by printing text or graphics on the surface of materials. Lithography is currently one of the most feasible techniques used for patterning micro\/nanoscale features of desired designs with definite shape, size and material compositions, selectively on the material of choice for device fabrication. Several lithographic methods are developed with different resolution, reproducibility, speed, simplicity for processing, and acquisition costs, etc., by using different sources of energy. The process of utilizing light source for patterning is termed as photolithography and utilization of energetic beams as source are nomenclatured according to the type of energy source.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">During semiconductor processing, fabrication of micro\/nano-structures rearranges the additives by deposition, subtractives by etching, and surface dopants by annealing. Etching out the unwanted materials and depositing desired materials for fabrication of a complete nanosctructure or device structure is the key concept of microfabrication processing. Lithography is used for defining the wanted and unwanted regions by using a polymer chemical called resist layer over top of the surface to be patterned. The etching of unwanted material or metallization of new materials are pursued with the patterned resist on the surface, followed by resist cleaning to fabricate the desired structure. Simple solvents includes acetone, methyl ethyl ketone (CH<sub>3<\/sub>COC<sub>2<\/sub>H<sub>5<\/sub>), methyl isobutyl ketone (CH<sub>3<\/sub>COC<sub>4<\/sub>H<sub>9<\/sub>) for chemicals used for resists stripping\/lift-off process. Additional O<sub>2<\/sub> plasma cleaning is effective for removing residual resist or any organic contaminations during lithography process.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>1.2. Types of Lithography<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">In general, the ability to view or fabricate nano-sized objects depends on availability of strongly focused particle beams. Since, diffraction limits the spot size of the exposure, smaller the wavelength of the beam particle produces smaller spots. Here in the tabular are few beam energies correlating to particle wavelength (\u00c5) at various energies that decide the spot size are tabulated in Table 1.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-215\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12.png\" alt=\"\" width=\"685\" height=\"168\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12.png 652w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12-300x74.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12-65x16.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12-225x55.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/01-12-350x86.png 350w\" sizes=\"auto, (max-width: 685px) 100vw, 685px\" \/><br \/>\n<strong>Table 1. <em>Particle wavelength (\u00c5) at various energies<\/em><\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-216 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972.png\" alt=\"\" width=\"809\" height=\"401\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972.png 809w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972-300x149.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972-768x381.png 768w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972-65x32.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972-225x112.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/02-11-e1544444377972-350x173.png 350w\" sizes=\"auto, (max-width: 809px) 100vw, 809px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\"><em><strong>1.3 Basic components and working principle of lithography<\/strong><\/em><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>1) Energy Source- Modifies the resist dissolution rate.<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>2) Mask \u2013 Allows patterning by shining direct energy to the resist.<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>3) Exposure Systems\/Aligner &#8211; Aligns the mask to patterns to be written on wafer.<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em>4) Resist &#8211; Transfers the image from mask to wafer.<\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Schematic of the photolithography technique is demonstrated in Figure-1. Generally, photolithography utilizes a light source that illuminates over an area of larger dimension compared to the dimension of the features to be designed. This requires a photo mask of same design with the feature sizes to restrict light to pass through and fall on to the photoresist on the substrate. The photo mask is the master pattern of the designs that transfer to wafers. The region, where light falls, could change the chemical decomposition of the polymer used as photoresist and could be dissolved out using another solvent during the lift-off process.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-217\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9.png\" alt=\"\" width=\"442\" height=\"255\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9.png 381w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9-300x173.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9-65x38.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9-225x130.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/03-9-350x202.png 350w\" sizes=\"auto, (max-width: 442px) 100vw, 442px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 1. <em>Components of Lithography<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>1.3.1. Steps for Photolithography<\/strong><\/em><\/p>\n<ul>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Sample surface preparation<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Resist coating (Spin casting)<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Pre-bake (Soft bake)<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Alignment (Photo mask and substrate)<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Exposure<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Post-bake (Hard bake)<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Development<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Processing using the resist masking layer (Etching, Metallization, \u2026)<\/em><\/li>\n<li class=\"no-indent\" style=\"text-align: justify\"><em>Lift-off of resist layer<\/em><\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>2. Electron Beam Lithography<\/strong><\/h1>\n<p class=\"no-indent\" style=\"text-align: justify\">The difference between photolithography and E-beam lithography are pointed here.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-218\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10.png\" alt=\"\" width=\"822\" height=\"305\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10.png 822w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10-300x111.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10-768x285.png 768w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10-65x24.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10-225x83.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/04-10-350x130.png 350w\" sizes=\"auto, (max-width: 822px) 100vw, 822px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Electron beam lithography is a mask-less technology developed in 1950s. The aim is to create nanometer scale structures in the resist that can subsequently be transferred to the substrate material and the resists used as a patterned mask for semiconductor processing during micro-fabrication processes. The final pattern is created directly from a digital representation on computer and scanning the electron beam on the resist- coated substrate following the computer patterning. This is pursued with scanning the beam over the resist coated substrate by controlling its deflection from a computer. The exposed regions (in the case of a positive resist) or unexposed regions (in the case of a negative resist) are then selectively removed (developed). It\u2019s primary advantage is it\u2019s ability to draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Example of gold (Au) metallization using resist coating and e-beam lithography is sketched in Figures 2 &#8211; 6. The polymethyl methacrylate (PMMA) as positive e-beam resist with chlorobenzene or anisole as casting solvent, is spin coated over the substrate. Electron beam exposure breaks the polymer into fragments that we dissolve in a developer (1:1 of methyl isobutyl ketone and isopropyl alcohol).<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-219\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8.png\" alt=\"\" width=\"794\" height=\"124\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8.png 794w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8-300x47.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8-768x120.png 768w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8-65x10.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8-225x35.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/05-8-350x55.png 350w\" sizes=\"auto, (max-width: 794px) 100vw, 794px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 2. <em>Chemical reaction of the resist polymer after exposure to energetic beam<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-220\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7.png\" alt=\"\" width=\"513\" height=\"248\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7.png 513w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7-300x145.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7-65x31.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7-225x109.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/06-7-350x169.png 350w\" sizes=\"auto, (max-width: 513px) 100vw, 513px\" \/><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-221\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6.png\" alt=\"\" width=\"403\" height=\"158\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6.png 403w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6-300x118.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6-65x25.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6-225x88.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/07-6-350x137.png 350w\" sizes=\"auto, (max-width: 403px) 100vw, 403px\" \/><strong>Figure. 3. <em>Exposure to electron resist cross-section: The electron beam causes chemical changes in the exposed areas<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-222\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3.png\" alt=\"\" width=\"498\" height=\"84\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3.png 498w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3-300x51.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3-65x11.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3-225x38.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/08-3-350x59.png 350w\" sizes=\"auto, (max-width: 498px) 100vw, 498px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 4. <em>Development of electron resist cross-section: Chemically changed e- resist dissolved in a specific solvent (positive lithography)<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">With the removal of the exposed resist from the substrate, a thin metallic layer is deposited which sticks to the substrate, while on the unexposed areas the metal sticks to the resist surface (Fig. 5). After metal deposition the remaining (unexposed) resist is dissolved in an aggressive solvent and lift off). The metal sticking to the resist loses footing and only the metal sticking to the substrate remains after lift-off process (as in Fig. 6).<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-223\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2.png\" alt=\"\" width=\"479\" height=\"103\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2.png 479w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2-300x65.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2-65x14.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2-225x48.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/09-2-350x75.png 350w\" sizes=\"auto, (max-width: 479px) 100vw, 479px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 5. <em>Electron resist cross-section after metal deposition<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-224\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1.png\" alt=\"\" width=\"496\" height=\"114\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1.png 496w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1-300x69.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1-65x15.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1-225x52.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/10-1-350x80.png 350w\" sizes=\"auto, (max-width: 496px) 100vw, 496px\" \/><br \/>\n<strong>Figure 6. <em>Circuit cross-section after metal deposition<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>3. Formation of Thin Films Resists using Spin Coating<\/strong><\/h1>\n<p class=\"no-indent\" style=\"text-align: justify\">Spin coating is a process used to deposit or coat a liquid or a suspension in the form of a thin film by introducing the solution at the center of the rotating substrate (as shown in Figure 7). In spin coating a substrate is placed on the chuck (sample holder) of the spin coater that connects to a vacuum pump to hold the substrate. A small amount of resist is poured at the center of the substrate with help of a dropper. Further this substrate is rotated at a constant angular speed for specific time period. The spinning at high speed using a motor allows the coating material to spread out over the substrates by centrifugal force and is continued till the desired amount of thickness is achieved. The steps to be followed during the spin coating process are indicated in Figure 7. Repeating the spin coating process consecutively for few times can form highly thick films.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Generally, the spinning speed and spinning time of the substrate are controlled according to the required thickness of the film. Viscosity and volatility of solvent, surface tension, and amount of solid content in the suspension are additional factors that affect the thickness of the coated film. Centrifugal force, viscous force, and evaporation rate of the solvent are the forces involved in the spin coating process.<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-225 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963.png\" alt=\"\" width=\"349\" height=\"250\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963.png 349w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963-300x215.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963-65x47.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/11-e1544444513963-225x161.png 225w\" sizes=\"auto, (max-width: 349px) 100vw, 349px\" \/><br \/>\n<strong>Figure 7: <em>Steps to follow during spin coating process.<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-226\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/12.png\" alt=\"\" width=\"458\" height=\"426\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/12.png 458w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/12-300x279.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/12-65x60.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/12-225x209.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/12-350x326.png 350w\" sizes=\"auto, (max-width: 458px) 100vw, 458px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 8: <em>Variation of thickness of the spin coated films w. r. t. the (a) spin speed (b) executing time (c) viscosity<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The thickness of the film depends on the viscosity and concentration of the solution. Thinner films of suspension material can be formed by using low viscos and\/or non-volatile solvents spin-coated at higher speeds. Figure 8a and 8b represents the general trend for the expected variation in the film thickness with speed and time as parameters. For most of the resist materials, the final thickness is inversely proportional to the spin speeds and spins time,<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>?= 1\/\u221aw<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">where, \u2018t\u2019 is the thickness of the material and w is the angular speed. Figure 8c shows that for low viscous material the thickness is low and for high viscous material the thickness is high.<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>4. Electron Beam Lithography System<\/strong><\/h1>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Electron-beam lithography systems can be classified according to both the beam shape and beam deflection. Earlier systems scanned Gaussian-shaped beams in a raster fashion. Nowadays, systems use shaped beams, which may be deflected to various positions in the writing field (this is also known as vector scan)<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-230\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/13.png\" alt=\"\" width=\"482\" height=\"305\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/13.png 461w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/13-300x190.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/13-65x41.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/13-225x143.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/13-350x222.png 350w\" sizes=\"auto, (max-width: 482px) 100vw, 482px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 9.<em> Electron Beam Exposure Systems<\/em><\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">An electron beam lithography system (as shown in Figure 9) consists of an electron source, a lens system, an electron beam deflection system, a motorized stage, and computers and software to control all the elements. The beam deflection system is used to scan the beam within a writing field, typically 100 \u00b5m x 100 \u00b5m up to 1 mm x 1 mm. The movement between writing fields is performed by the motorized stage, controlled with a laser interferometer to achieve the smallest possible stitching error between those writing fields.<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1. Electron Beam Sources<\/strong><\/em><\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-231 size-full\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777.png\" alt=\"\" width=\"754\" height=\"178\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777.png 754w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777-300x71.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777-65x15.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777-225x53.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/0-3-e1544443937777-350x83.png 350w\" sizes=\"auto, (max-width: 754px) 100vw, 754px\" \/><\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-232\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/14.png\" alt=\"\" width=\"180\" height=\"178\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/14.png 180w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/14-65x64.png 65w\" sizes=\"auto, (max-width: 180px) 100vw, 180px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 9.<em> Work Function and Fermi level of metals <\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong><em>Techniques for electron emissions from the source metal are listed below:<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1.1. Types of Sources<\/strong><\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>I) THERMIONIC EMITTERS<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">In thermionic emitters, electrons are given thermal energy to overcome the barrier (work function) of the emitting material. Current is given by the Richardson-Dushman equation, which relates the current density of a thermionic emission to the work function (\u03c60) and temperature (T) of the emitting material by mathematical relation,<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-233\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1.png\" alt=\"\" width=\"811\" height=\"148\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1.png 811w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1-300x55.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1-768x140.png 768w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1-65x12.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1-225x41.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/000-1-350x64.png 350w\" sizes=\"auto, (max-width: 811px) 100vw, 811px\" \/> <img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-234\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2.png\" alt=\"\" width=\"748\" height=\"148\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2.png 748w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2-300x59.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2-65x13.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2-225x45.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/00-2-350x69.png 350w\" sizes=\"auto, (max-width: 748px) 100vw, 748px\" \/><\/p>\n<p class=\"no-indent\"><strong>III) PHOTO EMITTERS<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">In\u00a0 photo\u00a0 emitters,\u00a0 energy\u00a0 is\u00a0 given\u00a0 to\u00a0 electrons\u00a0 by\u00a0 incident\u00a0 radiation\u00a0 (photons).\u00a0 Only\u00a0 photo-electrons generated close to the surface are able to escape from the material.<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>4.1.2. Cathode Materials<\/strong><\/em><\/p>\n<ul>\n<li class=\"no-indent\">Thermionic cathodes: Thoriated tungsten (1700 C &amp; 3 A\/cm2); WC+ThO2 W + Th+ CO2 (bad vacuum) lanthanum hexaborid; oxide coated (750 C &amp; 0.5 A\/cm2); Ni coated by Sr-O, Ba-O, Ca-O; tungsten sponge filled with Ba\/Ca aluminate (1100 C &amp; 5 A\/cm2) are used as source materials.<\/li>\n<li class=\"no-indent\">Field-Emission cathodes (best but most expensive): The emission occurs in lobes because of crystal facets present at the surface emission can be unstable.<\/li>\n<\/ul>\n<p class=\"no-indent\">Various types of cathode materials used in e-beam lithography are tabulated below.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-235\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/15.png\" alt=\"\" width=\"795\" height=\"401\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15.png 795w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15-300x151.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15-768x387.png 768w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15-65x33.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15-225x113.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/15-350x177.png 350w\" sizes=\"auto, (max-width: 795px) 100vw, 795px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Table 4. <em>Various materials used as cathodes to generate electron beams<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>4.2. Lenses<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Both electrostatic and magnetic lenses are used in electron beam lithography system. However, electrostatic lenses have more aberrations, hence these are not used for fine focusing. There is no current mechanism to make achromatic electron beam lenses, so extremely narrow dispersions of the electron beam energy are needed for finest focusing.<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>4.3. E\u2010 beam Lithography Write Time<\/strong><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The minimum time to expose a given area for a given dose is estimated from D. A = T. I, where T is the time to expose the object (can be divided into exposure time\/step size), I is the beam current, D is the dose, and A is the area exposed. For example, assuming an exposure area of 1cm2, a dose of 10\u22123 Coulomb\/cm2, and a beam current of 10\u22129 Amperes, the resulting minimum write time would be 106 seconds (about 12 days).<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<h1 class=\"no-indent\" style=\"text-align: center\"><strong>5. Stage and Substrate Positioning in E-beam Lithography<\/strong><\/h1>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.1. Positioning the Sample and Stage<\/strong><\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The scanning of beams is controlled by its deflection from a computer (sequential exposure) coded program. Exposure in a spot takes ~10<sup>-7<\/sup> s and a mechanical stage is used to move the samples to have a beam exposure along larger distances.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">Alignment is made for each stage positions, either by checking for registration marks, or using laser interferometers to precisely measure the stage movement.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">A\u00a0 good\u00a0 quality\u00a0 substrate\u00a0 for\u00a0 electron\u00a0 beam\u00a0 lithography\u00a0 must\u00a0 satisfy\u00a0 various\u00a0 conditions\u00a0 stated\u00a0 below:<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">1) It should be conductive, or else the wafer would build up an electric charge, which would deflect the electron beam, thus distorting the drawn pattern.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">2) The base for electronic circuits should be insulating (to avoid the entire circuit would be short circuited). The substrate should be as close to insulating as possible without distorting the drawn pattern.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The most widely used substrate is silicon, which is semiconducting with a thin insulating layer of silicon dioxide on top. Other substrates that can be used are glass plates coated with metal chrome, widely used in mask production, in which the metal layer should be grounded before drawing.<\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2. Scanning of e-beam on the Resist Coated Surfaces<\/strong><\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The e-beam scanning system for moving over the resist layer could contain single or multiple beams scanned over the resist layers in vector or raster scanning modes. Various scanning systems are categorized in Figure 10.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-236\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/16.png\" alt=\"\" width=\"611\" height=\"220\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/16.png 564w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/16-300x108.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/16-65x23.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/16-225x81.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/16-350x126.png 350w\" sizes=\"auto, (max-width: 611px) 100vw, 611px\" \/><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><strong>Figure 10. <em>Different scanning systems utilized in e-beam lithography.<\/em><\/strong><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2.1. Vector scan:<\/strong><\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The vector scanning systems deflect the beam to follow paths dictated by the pattern and is schematized in Figure 11a. A scanning technique where the beam is positioned over an area of the substrate, and the features in that area are drawn out using lines according to the pattern data. The beam remains on at all times. The Raster scan is performed by following the three steps:<\/p>\n<ul>\n<li class=\"no-indent\" style=\"text-align: justify\">An area of an individual die is aligned under the electron beam<\/li>\n<li class=\"no-indent\" style=\"text-align: justify\">The beam is deflected so as to draw out the features in that area of the chip<\/li>\n<li class=\"no-indent\" style=\"text-align: justify\">The chip is completed either by a step-and-repeat method, or by continually moving the substrate\u00a0 The alignment of features in adjacent scanning area is important. A measure of misalignment is termed as the butting error<\/li>\n<\/ul>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-237\" src=\"http:\/\/msp11.epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/sites\/112\/2018\/12\/17.png\" alt=\"\" width=\"647\" height=\"319\" srcset=\"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/17.png 647w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/17-300x148.png 300w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/17-65x32.png 65w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/17-225x111.png 225w, https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-content\/uploads\/sites\/112\/2018\/12\/17-350x173.png 350w\" sizes=\"auto, (max-width: 647px) 100vw, 647px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\"><em><strong>5.2.2. Raster Scan<\/strong><\/em><\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The raster-scanning systems cover the area of pattern by switching the e-beam on and off as required by the patterns shape and is schematized in Fig. 11b. A scanning technique where the beam scans line by line a section of the surface. The beam is turned on or off depending on whether the current pixel is to be exposed or not. The Raster scan is performed as follows:<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The chip is divided into stripes of ~2<sup>8<\/sup> pixels.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The selected strip is written onto the substrate.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 The beam scans over the substrate line by line.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 If the current pixel is to be exposed, the beam is on.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">\u2022 If the current pixel is not to be exposed, the beam remains off.<\/p>\n<p class=\"no-indent\" style=\"text-align: justify\">The substrate is moved perpendicular to the scan lines by a laser-controlled table.<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<table>\n<tbody>\n<tr>\n<td><strong>you can view video on Electron Beam Lithography \u2013 I<\/strong><\/td>\n<td><a href=\"https:\/\/youtu.be\/0zbHJQCQnyA\" target=\"_blank\" rel=\"noopener\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-120\" src=\"http:\/\/epgpbooks.inflibnet.ac.in\/wp-content\/uploads\/2018\/11\/download.png\" alt=\"\" width=\"36\" height=\"36\" \/><\/a><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n<p><strong>Summary<\/strong><\/p>\n<ul>\n<li class=\"no-indent\" style=\"text-align: justify\">Advantages of e-beam lithography includes smaller spot size &lt; 100 \u00c5, high speed writing with great precision of e-beam deflection and modulation, good control over the energy and dose delivered to resist provides an ultimate machine for patterning resists with high resolution, high density, high sensitivity and high reliability.<\/li>\n<li class=\"no-indent\" style=\"text-align: justify\">In e-beam lithography, the key focus is the quality of the electron optics (e.g., the ability to create a focused spot), the choice of resist, substrate and developer, and the process conditions of electron beam energy and dose, and development time and temperature, are the key parameters that defines the successful designing of nanometer scale patterns.<\/li>\n<li class=\"no-indent\" style=\"text-align: justify\">Two distinct uses of e-beam lithography, (a) direct exposure of resist for device fabrication, (b) mask fabrication for subsequent photolithography.<\/li>\n<li class=\"no-indent\" style=\"text-align: justify\">Various scanning systems are categorized by the way they scans. The vector scan features two-dimensional full-chip scan, provides a distortion free deflection, nd uses a stepped stage movement. The Raster scan features one dimensional line scan with continuously moving stage.<\/li>\n<\/ul>\n","protected":false},"author":3,"menu_order":12,"template":"","meta":{"pb_show_title":"on","pb_short_title":"","pb_subtitle":"","pb_authors":["dr-ajit-k-mahapatro"],"pb_section_license":""},"chapter-type":[],"contributor":[58],"license":[],"class_list":["post-214","chapter","type-chapter","status-publish","hentry","contributor-dr-ajit-k-mahapatro"],"part":3,"_links":{"self":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapters\/214","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapters"}],"about":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/wp\/v2\/types\/chapter"}],"author":[{"embeddable":true,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/wp\/v2\/users\/3"}],"version-history":[{"count":10,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapters\/214\/revisions"}],"predecessor-version":[{"id":477,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapters\/214\/revisions\/477"}],"part":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/parts\/3"}],"metadata":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapters\/214\/metadata\/"}],"wp:attachment":[{"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/wp\/v2\/media?parent=214"}],"wp:term":[{"taxonomy":"chapter-type","embeddable":true,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/pressbooks\/v2\/chapter-type?post=214"},{"taxonomy":"contributor","embeddable":true,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/wp\/v2\/contributor?post=214"},{"taxonomy":"license","embeddable":true,"href":"https:\/\/ebooks.inflibnet.ac.in\/msp11\/wp-json\/wp\/v2\/license?post=214"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}